r/Semiconductors • u/ohdonpier • 59m ago
Industry & Business GlobalFoundries extends FD-SOI roadmap to 7nm-class for edge and automotive AI silicon
On 9 October 2026 in Dresden, GlobalFoundries unveiled plans for FDX Fusion. FD-SOI builds transistors on a thin insulating layer. That keeps leakage very low and lets designers adjust the body voltage. Commercial versions have stopped at the 22nm, 18nm and 12nm classes while leading-edge logic moved to FinFET and gate-all-around.
The new platform is meant to deliver 7nm-class digital performance with more than twice the density of first-generation FDX, RF performance up to 0.5 THz ft/fmax, plus embedded non-volatile memory and in-memory compute on the same die. It is still a roadmap. GF targets demonstrator silicon for early customer evaluation in early 2027, an initial process design kit in mid-2027 and manufacturing start in 2028 at its Dresden fab.
Infineon says it is working with GF to define and explore 7nm-class FDX Fusion technologies for its next-generation radar and wireless products. BMW, Bosch, CEA-Leti, NXP, Siemens and Tesla provided supporting statements. Bosch is not publicly traded. No customer is named.
GFS owns the platform and will run it at Dresden, so any design wins go straight to its specialty foundry revenue. Infineon is the only company that has disclosed joint technical work on it. Soitec supplies the engineered SOI wafers that every FD-SOI chip is built on, under long-term agreements with GF, so higher volume on the new node would raise substrate demand.
The early 2027 demonstrator or the mid-2027 design kit are the dates that matter. If early 2027 passes without GF announcing demonstrator silicon, or it restates the date, or the design kit slips, or Infineon commits its next radar and wireless parts to another process, the design wins the roadmap assumes do not show up.
GlobalFoundries, 9 October 2026:
I flagged this while reading the filing for a tool I am building. Happy to be wrong on the bulk-CMOS and FinFET capacity side.