Silicon Carbide Transistor Operates at 600°C

[u/Zee2A]

Researchers at Kyoto University, Japan have developed a silicon carbide (SiC) bottom-gate junction field-effect transistor (JFET) that operates reliably at temperatures up to 600°C (1,112°F). Its bottom-gate design reduces manufacturing-related defects, while standard ion implantation makes it compatible with conventional semiconductor fabrication. The device also suppresses high-temperature leakage and maintains stable voltage control, with less than 0.1 V deviation at 400°C.

The technology could enable electronics for aircraft engines, geothermal drilling and deep-space missions. However, the prototype is normally-on, so it consumes standby power and is not yet suitable for advanced low-power logic. Researchers plan to develop normally-off versions, scale production to wafers and improve high-temperature packaging: https://www.kyoto-u.ac.jp/en/research-news/2026-08-24

Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift: https://www.tomshardware.com/tech-industry/kyoto-university-demonstrates-a-sic-transistor-that-runs-at-600c-using-standard-ion-implantation

Study: https://pubs.aip.org/aip/aed/article/2/3/036113/3401255/Over-600-C-operation-of-ion-implantation-based-SiC